Monolith Semiconductor Inc.
408 Fannin Avenue, Round Rock, TX 78664
Dr. Banerjee has 15 years of experience in silicon and SiC high-voltage technology. He received his PhD in Electrical Engineering from Rensselaer Polytechnic Institute demonstrating SiC lateral RESURF MOSFETs. From 2002-2012 Sujit was part of Power Integrations where he was responsible for developing and transitioning silicon power IC technologies to foundry production. Sujit worked closely with new product definition and design teams to lead the manufacturing ramp-up of multiple generations of silicon power IC technologies. In this role, Sujit provided leadership to multiple cross-functional teams to resolve critical reliability and manufacturing issues with high-voltage ICs. Sujit managed interactions with customers and various application engineers regarding all technology related issues. The technologies that Sujit developed have played a key role in Power Integration's strong market position in off-line power supply ICs, generating annual revenues of >$100M. Sujit holds more than 25 patents.
Over the past 15 years, Kevin has developed high-performance wide-bandgap semiconductor devices, specifically SiC power MOSFETs. He received his PhD in Electrical Engineering from Rensselaer Polytechnic Institute by developing some of the first GaN based power MOSFETs. Kevin then spent 10 years at General Electric, leading GE's SiC power MOSFET development. Subsequently, he joined SemiSouth where he served as Vice President of Product Development to commercialize SiC Schottky diodes and SiC JFETs. During his time in the field of SiC power devices, his work with academic, industrial and government institutions has focused on developing new semiconductor device designs and processes for reliable, high-performance SiC power MOSFETs. Kevin has been granted 25 patents and has authored over 80 papers and presentations. He is an editor of IEEE Electron Device Letters.
Kiran co-founded Monolith Semiconductor in 2013 where he serves as the Vice President of Product Development. Kiran is responsible for the development of process and device technology and for product development from concept phase to manufacturing. From 2010 to 2012, Kiran was a principal engineer at SemiSouth Laboratories where he developed 600V, 1200V and 1700V SiC Vertical JFETs and Schottky diode products for power electronics applications. From 2001 to 2010, he was a Senior Engineer at IBM's Semiconductor and Research Development Center (SRDC) in Burlington, Vermont focusing on the development of ESD and Latchup solutions for advanced CMOS technologies, analog & mixed signal and high voltage technologies. Kiran Chatty graduated from Rensselaer Polytechnic Institute (RPI) with a Ph.D. in Electrical Engineering in 2001. The focus of his doctoral research was on the investigation of MOS properties on Silicon Carbide (SiC) and on SiC MOS-based high-voltage power devices. Kiran has been granted 33 US patents and has authored more than 50 publications in journals and conferences in the areas of Silicon Carbide, ESD and latchup.